CHARACTERIZATION OF GA0.47IN0.53AS AND AL0.48IN0.52AS LAYERS GROWN LATTICE MATCHED ON INP BY MOLECULAR-BEAM EPITAXY

被引：25
|
作者：
MASSIES, J [1 ]
ROCHETTE, JF [1 ]
ETIENNE, P [1 ]
DELESCLUSE, P [1 ]
HUBER, AM [1 ]
CHEVRIER, J [1 ]
机构：
[1] THOMSON CSF,CENT RES LAB,F-91401 ORSAY,FRANCE
来源：
JOURNAL OF CRYSTAL GROWTH | 1983年 / 64卷 / 01期
关键词：
D O I：
10.1016/0022-0248(83)90255-5
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：101 / 107
页数：7
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