QUENCHED-IN DEFECTS IN LASER ANNEALED SILICON

被引：15

|

作者：

FAN, ZK

HO, VQ

SUGANO, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 05期

关键词：

D O I：

10.1063/1.93124

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：418 / 420

页数：3

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