QUENCHED-IN DEFECTS IN LASER ANNEALED SILICON

被引：15
|
作者：
FAN, ZK
HO, VQ
SUGANO, T
机构：
来源：
APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 05期
关键词：
D O I：
10.1063/1.93124
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：418 / 420
页数：3
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