ANOMALOUS HEAT-CONDUCTION OF ION-IMPLANTED AMORPHOUS LAYERS IN SILICON-CRYSTALS USING A LASER-PROBE TECHNIQUE

被引：8

|

作者：

GOLDSMID, HJ

HORA, H

PAUL, GL

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 81卷 / 02期

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D O I：

10.1002/pssa.2210810248

中图分类号：

T [工业技术];

学科分类号：

08 ;

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页码：K127 / K130

页数：4

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[24] THE DETERMINATION OF AMORPHOUS LAYER THICKNESS IN ION-IMPLANTED SILICON USING SECONDARY ION MASS-SPECTROMETRY
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[30] INVESTIGATION OF BORON-DOPED ION-IMPLANTED LAYERS IN SILICON USING THE HALL-CURRENT METHOD
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