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- [26] DEPTH DISTRIBUTION OF DEFECTS CREATED IN SILICON BY ION-BOMBARDMENT SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (10): : 1176 - 1177
- [30] INFLUENCE OF IRRADIATION TEMPERATURE ON AMORPHIZATION OF SILICON BY ION-BOMBARDMENT SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (05): : 630 - 631