ION CHANNELING STUDIES OF LOW-ENERGY ION-BOMBARDMENT INDUCED CRYSTAL DAMAGE IN SILICON

被引：14
|
作者：
VITKAVAGE, DJ [1 ]
DALE, CJ [1 ]
CHU, WK [1 ]
FINSTAD, TG [1 ]
MAYER, TM [1 ]
机构：
[1] UNIV N CAROLINA,DEPT PHYS & ASTRON,CHAPEL HILL,NC 27514
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1986年 / 13卷 / 1-3期
关键词：
D O I：
10.1016/0168-583X(86)90519-7
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：313 / 318
页数：6
相关论文
共 50 条
  • [1] ION CHANNELING STUDIES OF LOW ENERGY ION BOMBARDMENT INDUCED CRYSTAL DAMAGE IN SILICON.
    Vitkavage, D.J.
    Dale, C.J.
    Chu, W.K.
    Finstad, T.G.
    Mayer, T.M.
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1985, 13 (1-3): : 313 - 318
  • [2] THE DEPTH OF LOW-ENERGY ION-BOMBARDMENT DAMAGE IN TUNGSTEN
    WEBBER, RD
    WALLS, JM
    ULTRAMICROSCOPY, 1980, 5 (02) : 252 - 253
  • [3] LOW-ENERGY ION-BOMBARDMENT INDUCED DAMAGE IN UO2
    CAVALERU, AO
    VASILIU, F
    REVUE ROUMAINE DE PHYSIQUE, 1974, 19 (03): : 287 - &
  • [4] LOW-ENERGY ION-BOMBARDMENT OF SILICON DIOXIDE FILMS ON SILICON
    MCCAUGHAN, DV
    MURPHY, VT
    JOURNAL OF APPLIED PHYSICS, 1973, 44 (05) : 2008 - 2017
  • [5] A STUDY OF LOW-ENERGY AR+ ION-BOMBARDMENT INDUCED LATTICE DAMAGE IN (100) N-GAAS BY CHANNELING
    JINDAL, SK
    LIN, SS
    BROWN, LD
    MARCUS, HL
    SCHMERLING, MA
    SCANNING MICROSCOPY, 1988, 2 (04) : 1879 - 1883
  • [6] FIM STUDIES OF LATTICE DAMAGE IN TUNGSTEN FOLLOWING LOW-ENERGY HELIUM ION-BOMBARDMENT
    NICHOLSON, RJK
    WALLS, JM
    JOURNAL OF NUCLEAR MATERIALS, 1978, 76-7 (1-2) : 251 - 252
  • [7] LOW-ENERGY ION-BOMBARDMENT ON SI SURFACES
    MURAKAMI, J
    HASHIMOTO, T
    KUSUNOKI, I
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1991, 117 (1-3): : 243 - 244
  • [8] CRYSTAL ARGON BUBBLES IN NICKEL, AFTER LOW-ENERGY ION-BOMBARDMENT
    KUZMINOV, DB
    CHERNIKOV, VN
    GERCHIKOV, MY
    PANESH, AM
    SIMONOV, AP
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1988, 14 (21): : 1952 - 1957
  • [9] DAMAGE CAUSED IN SILICON DIOXIDE BY LOW-ENERGY ION BOMBARDMENT
    MCCAUGHA.DV
    MURPHY, VT
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (08) : C214 - &
  • [10] MICROSTRUCTURAL CHANGES IN AU FILMS INDUCED BY LOW-ENERGY ION-BOMBARDMENT
    POPOVIC, N
    MILIC, M
    BOGDANOV, Z
    PETROVIC, R
    VACUUM, 1990, 40 (1-2) : 149 - 152
12345