ION CHANNELING STUDIES OF LOW-ENERGY ION-BOMBARDMENT INDUCED CRYSTAL DAMAGE IN SILICON

被引：14
|
作者：
VITKAVAGE, DJ [1 ]
DALE, CJ [1 ]
CHU, WK [1 ]
FINSTAD, TG [1 ]
MAYER, TM [1 ]
机构：
[1] UNIV N CAROLINA,DEPT PHYS & ASTRON,CHAPEL HILL,NC 27514
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1986年 / 13卷 / 1-3期
关键词：
D O I：
10.1016/0168-583X(86)90519-7
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：313 / 318
页数：6
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