INSITU TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF SILICIDE-MEDIATED CRYSTALLIZATION OF AMORPHOUS-SILICON

被引：104
|
作者：
HAYZELDEN, C
BATSTONE, JL
CAMMARATA, RC
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
[2] JOHNS HOPKINS UNIV,DEPT MAT SCI & ENGN,BALTIMORE,MD 21218
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 02期
关键词：
D O I：
10.1063/1.106971
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The silicide-mediated phase transformation of amorphous to crystalline silicon was observed in situ in the transmission electron microscope. Crystallization of nickel-implanted amorphous silicon occurred at approximately 500-degrees-C. Nickel disilicide precipitates were observed to migrate through an amorphous Si film leaving a trail of crystalline Si. Growth occurred parallel to <111> directions. High resolution electron microscopy revealed an epitaxial NiSi2/Si(111) interface which was Type A. A diffusion-controlled mechanism for the enhanced crystallization rate was determined.
引用
收藏
页码：225 / 227
页数：3
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