INSITU TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF SILICIDE-MEDIATED CRYSTALLIZATION OF AMORPHOUS-SILICON

被引：104

作者：

HAYZELDEN, C

BATSTONE, JL

CAMMARATA, RC

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] JOHNS HOPKINS UNIV,DEPT MAT SCI & ENGN,BALTIMORE,MD 21218

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 02期

关键词：

D O I：

10.1063/1.106971

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The silicide-mediated phase transformation of amorphous to crystalline silicon was observed in situ in the transmission electron microscope. Crystallization of nickel-implanted amorphous silicon occurred at approximately 500-degrees-C. Nickel disilicide precipitates were observed to migrate through an amorphous Si film leaving a trail of crystalline Si. Growth occurred parallel to <111> directions. High resolution electron microscopy revealed an epitaxial NiSi2/Si(111) interface which was Type A. A diffusion-controlled mechanism for the enhanced crystallization rate was determined.

引用

页码：225 / 227

页数：3

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