PHOTOLUMINESCENCE STUDY OF DOUBLE BARRIER RESONANT TUNNELING DIODES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：2
|
作者：
TEWS, H
机构：
[1] Siemens Research Laboratories, 8000 Munich 83
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1990年 / 8卷 / 04期
关键词：
D O I：
10.1016/0749-6036(90)90352-8
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Low-temperature photoluminescence spectroscopy was performed on GaAs GaAlAs double barrier resonant tunneling diodes grown by metalorganic vapour phase epitaxy. Intense tunable luminescence was observed. It depended on laser excitation density and barrier height and on epitaxial growth parameters like growth stops and background impurity concentration. An analysis of RTD structures with InGaAs, GaAs or AlGaAs spacers between contact layers and barriers showed that the line was due to radiative recombination at the spacer/barrier interfaces. © 1990.
引用
收藏
页码：467 / 474
页数：8
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