PHOTOLUMINESCENCE STUDY OF DOUBLE BARRIER RESONANT TUNNELING DIODES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

Low-temperature photoluminescence spectroscopy was performed on GaAs GaAlAs double barrier resonant tunneling diodes grown by metalorganic vapour phase epitaxy. Intense tunable luminescence was observed. It depended on laser excitation density and barrier height and on epitaxial growth parameters like growth stops and background impurity concentration. An analysis of RTD structures with InGaAs, GaAs or AlGaAs spacers between contact layers and barriers showed that the line was due to radiative recombination at the spacer/barrier interfaces. © 1990.