IMPLANTATION ENERGY SELECTION IN MOLECULAR-BEAM EPITAXY GAAS FILMS ON SI SUBSTRATES

被引：0

作者：

XIAO, GM ^{[1
]}

YIN, SD ^{[1
]}

ZHANG, JP ^{[1
]}

DING, AJ ^{[1
]}

DONG, AH ^{[1
]}

ZHU, PR ^{[1
]}

ZHOU, JM ^{[1
]}

机构：

[1] ACAD SINICA,INST PHYS,BEIJING 100080,PEOPLES R CHINA

来源：

CHINESE PHYSICS LETTERS | 1991年 / 8卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

GaAs films made by molecular beam epitaxy with thicknesses ranging from 0.9 to 1.25-mu-m on Si have been implanted with Si ions at 1.2 MeV to dose of 1 x 10(15)/cm2. A rapid infrared thermal annealing and white light annealing were then used for recrystallization. Crystalline quality was analysed by using backscattering channeling technique with Li ion beam of 4.2 MeV. The experimental results show that energy selection is important for obtaining better and uniform recrystallized GaAs epilayers.

引用

页码：149 / 152

页数：4

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