INFRARED STUDY OF OXYGEN PRECIPITATES IN CZOCHRALSKI GROWN SILICON

被引：14
|
作者：
BORGHESI, A
GEDDO, M
PIVAC, B
机构：
[1] Dipartimento di Fisica A. Volta, Università di Pavia
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 10期
关键词：
D O I：
10.1063/1.347622
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Oxygen precipitation in the bulk of silicon wafers was investigated by using micro-Fourier transform infrared spectroscopy. It was found that even at 1100-degrees-C annealing (in single step) SiO2 precipitates are formed in platelet shape, in the bulk, giving rise to characteristic absorption peak in the infrared spectrum at 1230 cm-1. Complete mapping of wafer cross section demonstrated that these precipitates are not distributed homogeneously but are agglomerated in irregularly shaped clusters and are easily detectable up to distance of about 100-mu-m from the back surface and from the epi-substrate interface.
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收藏
页码：7251 / 7255
页数：5
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