NATURE OF OXYGEN DONOR IN CZOCHRALSKI-GROWN SILICON

被引：6
|
作者：
FUKUOKA, N
YONETA, M
MIYAMURA, R
SAITO, H
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 02期
关键词：
D O I：
10.1143/JJAP.26.197
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：197 / 201
页数：5
相关论文
共 50 条
  • [1] MECHANISMS OF OXYGEN INCORPORATION IN CZOCHRALSKI-GROWN SILICON
    MURGAI, A
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : C92 - C92
  • [2] PRECIPITATION AND REDISTRIBUTION OF OXYGEN IN CZOCHRALSKI-GROWN SILICON
    SHIMURA, F
    TSUYA, H
    KAWAMURA, T
    APPLIED PHYSICS LETTERS, 1980, 37 (05) : 483 - 486
  • [3] NEW OXYGEN RELATED SHALLOW THERMAL DONOR CENTERS IN CZOCHRALSKI-GROWN SILICON
    NAVARRO, H
    GRIFFIN, J
    WEBER, J
    GENZEL, L
    SOLID STATE COMMUNICATIONS, 1986, 58 (03) : 151 - 155
  • [4] OXYGEN INCORPORATION AND PRECIPITATION IN CZOCHRALSKI-GROWN SILICON
    MURGAI, A
    PATRICK, WJ
    COMBRONDE, J
    FELIX, JC
    IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1982, 26 (05) : 546 - 552
  • [5] The Marangoni convection and the oxygen concentration in Czochralski-grown silicon
    Xu, YS
    Liu, CC
    Wang, HY
    Hao, QY
    JOURNAL OF CRYSTAL GROWTH, 2003, 254 (3-4) : 298 - 304
  • [6] OXYGEN PRECIPITATION AND THERMAL DONOR FORMATION IN CZOCHRALSKI-GROWN SILICON DOPED WITH CARBON AND TIN
    WIJARANAKULA, W
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) : 2737 - 2739
  • [7] COESITE NATURE OF RODLIKE DEFECTS IN CZOCHRALSKI-GROWN AND ANNEALED SILICON
    MALYSHEV, KL
    ROMANOV, AE
    SITNIKOV, AA
    SOROKIN, LM
    FIZIKA TVERDOGO TELA, 1990, 32 (12): : 3659 - 3667
  • [8] OXYGEN PRECIPITATION AND MICRODEFECTS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS
    YASUTAKE, K
    UMENO, M
    KAWABE, H
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 83 (01): : 207 - 217
  • [9] Influence of metallic impurities on oxygen precipitation in Czochralski-grown silicon
    Shen, Bo
    Yang, Kai
    Zhang, Xuyu
    Shi, Hongtao
    Zhong, Rong
    Shi, Yi
    Zheng, Youdou
    Sekiguchi, T.
    Sumino, S.
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1997, 18 (02): : 118 - 123
  • [10] INFLUENCE OF CARBON AND OXYGEN ON DONOR FORMATION AT 700-DEGREES-C IN CZOCHRALSKI-GROWN SILICON
    OHSAWA, A
    TAKIZAWA, R
    HONDA, K
    SHIBATOMI, A
    OHKAWA, S
    JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) : 5733 - 5737
12345