The Marangoni convection and the oxygen concentration in Czochralski-grown silicon

被引：6
|
作者：
Xu, YS [1 ]
Liu, CC [1 ]
Wang, HY [1 ]
Hao, QY [1 ]
机构：
[1] Hebei Univ Technol, Sch Mat, Tianjin 300130, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2003年 / 254卷 / 3-4期
关键词：
convection; magnetic field assisted Czochralski method; microgravity conditions; elemental solids; semiconducting materials; semiconducting silicon;
D O I：
10.1016/S0022-0248(03)01169-2
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The Marangoni convection on the silicon melt surface in Czochralski method was investigated. The results showed that Marangoni convection is related strongly to oxygen in silicon. Introducing a magnetic field by NdFeB permanent magnet into the melt, when (B) over right arrow --> (B) over right arrow (0) ((B) over right arrow (0) is the critical value), all the macro-convections were restrained in the melt and the Marangoni convection on the free surface emerges and becomes dominant. The oxygen concentration in silicon can be controlled freely by the Marangoni convection. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：298 / 304
页数：7
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