PHOTOCONDUCTIVITY AND TRAPPING PARAMETERS IN HYDROGENATED AMORPHOUS-SILICON FILMS

被引：0

作者：

GALASSINI, S ^{[1
]}

MICOCCI, G ^{[1
]}

PENNETTA, C ^{[1
]}

RIZZO, A ^{[1
]}

TEPORE, A ^{[1
]}

ZUANNI, F ^{[1
]}

机构：

[1] CNR,GRP NAZL STRUTTURA MAT,LECCE,ITALY

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1983年 / 9卷 / 1-3期

关键词：

D O I：

10.1016/0254-0584(82)90027-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：295 / 300

页数：6

共 50 条

[41] 1/F NOISE IN AMORPHOUS-SILICON AND HYDROGENATED AMORPHOUS-SILICON THIN-FILMS
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