AU-GE BASED OHMIC CONTACTS ON GAAS

被引：7

|

作者：

PROCOP, M

SANDOW, B

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 95卷 / 02期

关键词：

D O I：

10.1002/pssa.2210950271

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：K211 / K215

页数：5

相关论文

共 50 条

[21] IMPROVED OHMIC PROPERTIES OF AU-GE CONTACTS TO THIN NORMAL-GAAS LAYERS ALLOYED WITH AN SIO2 OVERLAYER
VIDIMARI, F
ELECTRONICS LETTERS, 1979, 15 (21) : 674 - 676
[22] EFFECT OF ALLOYING TIME ON THE OHMIC CONTACT BEHAVIOUR OF Au/Au-Ge/GaAs(n) STRUCTURE.
Sharma, B.L.
Bharti, P.L.
Mukerjee, S.N.
Mohan, Satish
1978, 16 (08): : 727 - 730
[23] SEM ALLOYED AU-GE-NI OHMIC CONTACTS TO GAAS
NASSIBIAN, AG
KALKUR, TS
APPLICATIONS OF SURFACE SCIENCE, 1985, 22-3 (MAY): : 1019 - 1026
[24] COMPARISON OF AU/NI/GE, AU/PD/GE, AND AU/PT/GE OHMIC CONTACTS TO N-TYPE GAAS
LIN, C
LEE, CP
JOURNAL OF APPLIED PHYSICS, 1990, 67 (01) : 260 - 263
[25] EFFECTS OF HEATING RATE IN ALLOYING OF AU-GE TO N-TYPE GAAS ON OHMIC PROPERTIES
YOKOYAMA, N
OHKAWA, S
ISHIKAWA, H
JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (07) : 1071 - 1072
[26] BARRIER HEIGHT REDUCTION IN AU-GE SCHOTTKY CONTACTS TO N-TYPE GAAS
ILIADIS, A
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05): : 1340 - 1345
[27] DEPENDENCE OF OHMIC CONTACT QUALITY ON AU-GE ALLOY THICKNESS FOR N-TYPE GAAS
KALKUR, TS
DELL, J
NASSIBIAN, AG
INTERNATIONAL JOURNAL OF ELECTRONICS, 1984, 57 (05) : 729 - 736
[28] SOLUBILITY OF GAAS IN AU-GE EUTECTIC MELTS
STANCHINA, WE
WHELAN, JM
SOLID-STATE ELECTRONICS, 1983, 26 (08) : 817 - 819
[29] LOW RESISTANCE PD/GE/AU AND GE/PD/AU OHMIC CONTACTS TO NORMAL-TYPE GAAS
CHEN, CL
MAHONEY, LJ
FINN, MC
BROOKS, RC
CHU, A
MAVROIDES, JG
APPLIED PHYSICS LETTERS, 1986, 48 (08) : 535 - 537
[30] SEM ALLOYED Au-Ge-Ni OHMIC CONTACTS TO GaAs.
Nassibian, A.G.
Kalkur, T.S.
Applications of surface science, 1984, 22-23 : 1019 - 1026

← 1 2 3 4 5 →