IMPROVED OHMIC PROPERTIES OF AU-GE CONTACTS TO THIN NORMAL-GAAS LAYERS ALLOYED WITH AN SIO2 OVERLAYER

被引：24

|

作者：

VIDIMARI, F

机构：

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 21期

关键词：

D O I：

10.1049/el:19790479

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：674 / 676

页数：3

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