IMPROVED OHMIC PROPERTIES OF AU-GE CONTACTS TO THIN NORMAL-GAAS LAYERS ALLOYED WITH AN SIO2 OVERLAYER

被引：24
|
作者：
VIDIMARI, F
机构：
来源：
ELECTRONICS LETTERS | 1979年 / 15卷 / 21期
关键词：
D O I：
10.1049/el:19790479
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：674 / 676
页数：3
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