IMPROVED OHMIC PROPERTIES OF AU-GE CONTACTS TO THIN NORMAL-GAAS LAYERS ALLOYED WITH AN SIO2 OVERLAYER

被引：24
|
作者：
VIDIMARI, F
机构：
来源：
ELECTRONICS LETTERS | 1979年 / 15卷 / 21期
关键词：
D O I：
10.1049/el:19790479
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：674 / 676
页数：3
相关论文
共 50 条
  • [21] A comparative study of Pd/Sn/Au, Au/Ge/Au/Ni/Au, Au-Ge/Ni and Ni/Au-Ge/Ni ohmic contacts to n-GaAs
    Islam, MS
    McNally, PJ
    MICROELECTRONIC ENGINEERING, 1998, 40 (01) : 35 - 42
  • [22] MICROSTRUCTURE AND CONTACT RESISTIVITY OF LASER-ANNEALED AU-GE OHMIC CONTACTS TO GAAS
    AINA, O
    CHIANG, SW
    LIU, YS
    ROSE, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C384 - C384
  • [23] SEM ALLOYED Au-Ge-Ni OHMIC CONTACTS TO GaAs.
    Nassibian, A.G.
    Kalkur, T.S.
    Applications of surface science, 1984, 22-23 : 1019 - 1026
  • [24] METALLURGICAL STUDY OF ALLOYED AU/CR/AU/GE OHMIC CONTACTS ON N-GAAS
    WILLER, J
    OPPOLZER, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (03) : C117 - C117
  • [25] LOW RESISTANCE PD/GE/AU AND GE/PD/AU OHMIC CONTACTS TO NORMAL-TYPE GAAS
    CHEN, CL
    MAHONEY, LJ
    FINN, MC
    BROOKS, RC
    CHU, A
    MAVROIDES, JG
    APPLIED PHYSICS LETTERS, 1986, 48 (08) : 535 - 537
  • [26] Dewetting induced Au-Ge composite nanodot evolution in SiO2
    Datta, D. P.
    Chettah, A.
    Siva, V.
    Kanjilal, D.
    Sahoo, P. K.
    APPLIED SURFACE SCIENCE, 2018, 428 : 676 - 683
  • [27] EFFECTS OF HEATING RATE IN ALLOYING OF AU-GE TO N-TYPE GAAS ON OHMIC PROPERTIES
    YOKOYAMA, N
    OHKAWA, S
    ISHIKAWA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (07) : 1071 - 1072
  • [28] STUDY ON THE MAGNETIC PROPERTIES OF AU/GE/NI OHMIC CONTACTS TO GAAS/ALGAAS HTEROSTRUCTURES
    Zhong, Y.
    Zhong, Q.
    He, Q.
    Lu, Y. F.
    Zhao, J. T.
    Li, Z. K.
    Zhang, Z. H.
    Chi, Z. T.
    2010 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS CPEM, 2010, : 287 - +
  • [29] AN IMPROVED AU-GE-NI OHMIC CONTACT TO NORMAL-TYPE GAAS
    BRUCE, RA
    PIERCY, GR
    SOLID-STATE ELECTRONICS, 1987, 30 (07) : 729 - 737
  • [30] Improved uniformity of contact resistance in GaAs MESFET using Pd/Ge/Ti/Au ohmic contacts
    Kwak, JS
    Lee, JL
    Baik, HK
    IEEE ELECTRON DEVICE LETTERS, 1998, 19 (12) : 481 - 483
12345