NEW METHOD OF MODELING A MULTIPEAK RESONANT-TUNNELING DIODE

被引：11
|
作者：
HUANG, CY [1 ]
MORRIS, JE [1 ]
SU, YK [1 ]
KUO, TH [1 ]
机构：
[1] NATL CHENG KUNG UNIV,DEPT ELECT ENGN,TAINAN,TAIWAN
来源：
ELECTRONICS LETTERS | 1994年 / 30卷 / 12期
关键词：
RESONANT TUNNELING DEVICES; SEMICONDUCTOR DEVICE MODELS;
D O I：
10.1049/el:19940636
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors report an improved approach to modelling the I-V characteristics of a multipeak resonant tunnelling diode (RTD). The merit of this new RTD model is demonstrated.
引用
收藏
页码：1012 / 1013
页数：2
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