NEW METHOD OF MODELING A MULTIPEAK RESONANT-TUNNELING DIODE

被引：11

作者：

HUANG, CY ^{[1
]}

MORRIS, JE ^{[1
]}

SU, YK ^{[1
]}

KUO, TH ^{[1
]}

机构：

[1] NATL CHENG KUNG UNIV,DEPT ELECT ENGN,TAINAN,TAIWAN

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 12期

关键词：

RESONANT TUNNELING DEVICES; SEMICONDUCTOR DEVICE MODELS;

D O I：

10.1049/el:19940636

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report an improved approach to modelling the I-V characteristics of a multipeak resonant tunnelling diode (RTD). The merit of this new RTD model is demonstrated.

引用

页码：1012 / 1013

页数：2

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