共 50 条
- [41] Modelling of argon-implantation-induced boron redistribution in siliconMODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, 1996, 4 (02) : 179 - 191Lo, VCPan, MXWong, SPLam, YW
- [42] RECOIL IMPLANTATION OF ANTIMONY INTO SILICON BY ARGON ION-BOMBARDMENTNUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR): : 316 - 320ERICHSEN, RBAUMVOL, IJRDESOUZA, JP
- [43] LOCALIZED LIFETIME CONTROL BY ARGON ION-IMPLANTATION INTO SILICONJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C94 - C94MOGROCAMPERO, ALOVE, RP
- [44] IMPLANTATION TEMPERATURE EFFECT ON POLYCRYSTALLINE SILICON BY ION SHOWER DOPINGJOURNAL OF APPLIED PHYSICS, 1993, 74 (12) : 7114 - 7117MISHIMA, YTAKEI, MMATSUMOTO, NUEMATSU, T
- [47] DOPING OF SEMIINSULATING POLYCRYSTALLINE SILICON BY B, P, AND AS IMPLANTATION AND DIFFUSIONJOURNAL OF APPLIED PHYSICS, 1994, 75 (01) : 345 - 350LOMBARDO, SCAMPISANO, SUNICOTRA, M
- [48] Influence of Ge implantation on the mechanical properties of polycrystalline silicon microstructuresJOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2002, 12 (04) : 450 - 457Polymenakos, SStergiou, VCKontos, AGTsamis, CRaptis, YSTsoukalas, D
- [49] Polycrystalline silicon - silicon nitride multilayersMICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS, 1999, (164): : 499 - 502Williams, DANewcomb, SBNakazato, K
- [50] XRD and XTEM investigation of polycrystalline silicon carbide on polycrystalline siliconMATERIALS FOR MECHANICAL AND OPTICAL MICROSYSTEMS, 1997, 444 : 81 - 86Roy, SZorman, CAWu, CHFleischman, AJMehregany, M