STUDY OF ARGON AND SILICON IMPLANTATION DAMAGE IN POLYCRYSTALLINE SILICON

被引：4
|
作者：
HUANG, J
JACCODINE, RJ
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 05期
关键词：
D O I：
10.1149/1.2108784
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：993 / 995
页数：3
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