DOSE ENHANCEMENT EFFECTS IN SEMICONDUCTOR-DEVICES

被引：32
|
作者：
LONG, DM
MILLWARD, DG
WALLACE, J
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1982年 / 29卷 / 06期
关键词：
D O I：
10.1109/TNS.1982.4336482
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：1980 / 1984
页数：5
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