FORMATION AND CONTROL OF BORON BURIED LAYERS IN SILICON USING AN EXCIMER-LASER

Buried layers have been shown to enhance performance of Si MOSFET's in the deep submicrometer regime. Epitaxial growth methods such as atomic layer doping or ion implantation are currently used for the formation of such doping profiles. In this letter, we propose an alternative approach, using a XeCI (lambda=308 nn) pulsed excimer laser, for the fabrication of pulse-shaped B profiles in Si. This process affords simplicity, versatility, and independent control over the depth, width, and the height of the B buried layer.