Correlative assessment of structural and photoelectrical properties of thermally evaporated CdSe thin films

Cadmium Selenide thin films of different thicknesses, (1530-2230 angstrom) deposited by thermal evaporation on suitably cleaned glass substrates at different substrate temperatures (473-623K) are of polycrystalline nature having hexagonal structure. In gap type cell configuration of these films with thermally evaporated aluminium electrodes, the I-V characteristics are observed to be linear both under dark and monochromatic illuminations for low bias voltages, but show Poole-Frenkel type of conductivity for high bias voltages under the same illuminations. The values of lattice constant, grain size, microstrain and dislocation density of the deposited films are calculated and these are co-related with different photoelectrical parameters.