Effect of Annealing on Structural and Optical Properties of Thermally Evaporated CdSe Thin Films

被引:1
|
作者
Purohit, A. [1 ]
Chander, S. [1 ]
Nehra, Anshu [2 ]
Nehra, S. P. [3 ]
Lal, C. [4 ]
Dhaka, M. S. [1 ]
机构
[1] Mohanlal Sukhadia Univ, Dept Phys, Udaipur 313001, India
[2] Deenbandhu Chhotu Ram Univ Sci & Technol, Dept Phys, Murthal 131039, Sonepat, India
[3] Deenbandhu Chhotu Ram Univ Sci & Technol, Ctr Excellence Energy & Environm Studies, Murthal 131039, Sonepat, India
[4] Univ Rajasthan, Dept Phys, Jaipur 302001, Rajasthan, India
关键词
II-VI Semiconductor; CdSe thin films; X-ray diffraction; Optical properties;
D O I
10.1063/1.4915368
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In this study, the structural and optical properties of CdSe thin films are undertaken. These thin films were deposited on glass substrate employing thermal evaporation technique and subjected to air annealing at temperature 100 degrees C, 200 degrees C and 300 degrees C. The thickness was verified by ellipsometry and was found to be 445 nm. The results show that the thin films are nanocrystalline in nature and having cubic phase with preferred orientation (111). The calculated crystallographic parameters like inter planner spacing, lattice constant and grain size are in agreement with the standard data. The strain and dislocation density are observed to be varied with annealing while the optical band gap is found to be varied from 1.72eV to 1.89eV.
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页数:3
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