Electrical Properties of Thermally Evaporated CdSe and ZnCdSe Thin Films

被引：0
|
作者：
Priya, S. Selva [1 ,2 ]
Shree, B. Lakshmi [1 ,2 ]
Ranjani, P. Therasa [1 ,2 ]
Karthick, P. [2 ]
Jeyadheepan, K. [2 ]
Sridharan, M. [1 ,2 ]
机构：
[1] SASTRA Univ, Ctr Nanotechnol & Adv Biomat, Funct Nanomat & Devices Lab, Thanjavur 613401, India
[2] SASTRA Univ, Sch Elect & Elect Engn, Thanjavur 613401, India
来源：
MATERIALS TODAY-PROCEEDINGS | 2016年 / 3卷 / 06期
关键词：
Thermal Evaporation; ohmic; Carrier Concentration; SPECTROSCOPIC ELLIPSOMETRY; RAMAN-SCATTERING; ELECTRODEPOSITION; PHOTOCONDUCTIVITY;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Cadmium selenide (CdSe) and zinc (Zn) doped cadmium Selenide (ZnCdSe) thin films were deposited onto thoroughly cleaned glass substrates by thermally evaporating CdSe and Zn powders and then laterannealed at 200 degrees C for 2 h in vacuum. CdSe and ZnCdSe thin films were characterized using X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), energy dispersive analysis of X-rays (EDAX) and UV-Vis spectroscopy to study the structural, morphological, compositional and optical properties. The XRD patterns showed that the films were polycrystalline in nature. FE-SEM micrographs indicated that the films were smooth and homogeneously distributed. EDAX affirms the presence of Zn, Cd and Se. The optical band gap decreased with increasing thickness. The carrier concentration, current voltage (I-V) characteristics and resistivity of the films were studied using the Hall effect, electrometer and four point probe method. ZnCdSe films exhibited Ohmic behaviour in the range of -10 to + 10 V. (C) 2015 Elsevier Ltd. All rights reserved.
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页码：1487 / 1493
页数：7
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