PREVENTION OF THERMAL SURFACE DAMAGE IN THE HIGH-TEMPERATURE ANNEALING OF GAAS

被引:0
|
作者
CAMPBELL, PM [1 ]
机构
[1] USN,RES LAB,WASHINGTON,DC 20375
关键词
D O I
暂无
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:C349 / C349
页数:1
相关论文
共 50 条
  • [41] HIGH-TEMPERATURE DIFFUSION OF SULFUR IN GAAS
    TUCK, B
    POWELL, RG
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1981, 14 (07) : 1317 - 1324
  • [42] HIGH-TEMPERATURE HALL EFFECT IN GAAS
    IKOMA, H
    WANG, SS
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1968, 25 (06) : 1739 - &
  • [43] A HIGH-TEMPERATURE CREEP MODEL FOR GAAS
    MOTAKEF, S
    JOURNAL OF CRYSTAL GROWTH, 1991, 108 (1-2) : 33 - 36
  • [44] HIGH-TEMPERATURE SPUTTERED AMORPHOUS GAAS
    SEGUIN, JL
    ELHADADI, B
    CARCHANO, H
    FENNOUH, A
    AGUIR, K
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1995, 183 (1-2) : 175 - 181
  • [45] HIGH-TEMPERATURE ANNEALING BEHAVIOR OF SCHOTTKY BARRIERS ON GAAS WITH GOLD AND GOLD-GALLIUM CONTACTS
    GUHA, S
    ARORA, BM
    SALVI, VP
    SOLID-STATE ELECTRONICS, 1977, 20 (05) : 431 - &
  • [46] Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE
    F. Brunner
    E. Richter
    T. Bergunde
    I. Rechenberg
    A. Bhattacharya
    A. Maassdorf
    J. W. Tomm
    P. Kurpas
    M. Achouche
    J. Würfl
    M. Weyers
    Journal of Electronic Materials, 2000, 29 : 205 - 209
  • [47] DECREASE IN ELECTRICAL RESISTIVITY OF W FILMS ON GaAs SUBSTRATES AFTER HIGH-TEMPERATURE ANNEALING.
    Ohfuji, Shin-ichi
    Kuriyama, Youichi
    Nagano, Jin
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1986, 25 (12): : 1865 - 1870
  • [48] Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE
    Brunner, F
    Richter, E
    Bergunde, T
    Rechenberg, I
    Bhattacharya, A
    Maassdorf, A
    Tomm, JW
    Kurpas, P
    Achouche, M
    Würfl, J
    Weyers, M
    JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (02) : 205 - 209
  • [49] Effect of high-temperature annealing on electrical and optical properties of undoped semi-insulating GaAs
    Fang, ZQ
    Reynolds, DC
    Look, DC
    Paraskevopoulos, NG
    Anderson, TE
    Jones, RL
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (01) : 260 - 265
  • [50] NIAL/N-GAAS SCHOTTKY DIODES - BARRIER HEIGHT ENHANCEMENT BY HIGH-TEMPERATURE ANNEALING
    SANDS, T
    CHAN, WK
    CHANG, CC
    CHASE, EW
    KERAMIDAS, VG
    APPLIED PHYSICS LETTERS, 1988, 52 (16) : 1338 - 1340