PREVENTION OF THERMAL SURFACE DAMAGE IN THE HIGH-TEMPERATURE ANNEALING OF GAAS

被引：0
|
作者：
CAMPBELL, PM [1 ]
机构：
[1] USN,RES LAB,WASHINGTON,DC 20375
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C349 / C349
页数：1
相关论文
共 50 条
  • [21] REACTION OF A THERMAL INSULATING COATING WITH THE SURFACE OF ELECTRICAL-ENGINEERING STEEL DURING HIGH-TEMPERATURE ANNEALING
    PUZHEVICH, RB
    BORISENKO, VG
    SHVARTSMAN, LA
    METAL SCIENCE AND HEAT TREATMENT, 1986, 28 (9-10) : 687 - 690
  • [22] STRUCTURAL-CHANGE IN ALGAAS/INGAAS/GAAS PSEUDOMORPHIC HEMTS BY HIGH-TEMPERATURE RAPID THERMAL PRE-ANNEALING
    OKUBORA, A
    TANAKA, K
    OGAWA, M
    KASAHARA, J
    HAGA, T
    ABE, Y
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (112): : 447 - 452
  • [23] HIGH-TEMPERATURE CREEP OF GAAS
    BEHRENSMEIER, R
    BRION, HG
    HAASEN, P
    SIETHOFF, H
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1991, 124 (02): : 447 - 453
  • [24] DECOMPOSITION OF GAAS - IN SURFACE DURING THERMAL ANNEALING
    KRAWCZYK, SK
    OLIER, R
    KHOUK, A
    CHABLI, A
    MOLVA, E
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (04) : C233 - C233
  • [25] DEFECT FORMATION IN THERMAL SIO2 BY HIGH-TEMPERATURE ANNEALING
    HOFMANN, K
    RUBLOFF, GW
    MCCORKLE, RA
    APPLIED PHYSICS LETTERS, 1986, 49 (22) : 1525 - 1527
  • [26] In situ study of thermal shock damage to high-temperature ceramics
    Cherepanov, D. E.
    Vyacheslavov, L. N.
    Popov, V. A.
    Ryzhkov, G. A.
    Kasatov, A. A.
    Vasilyev, A. A.
    Arakcheev, A. S.
    Ruktuev, A. A.
    Kandaurov, I. V.
    Shoshin, A. A.
    NUCLEAR MATERIALS AND ENERGY, 2023, 36
  • [27] Effects of high-temperature atmospheric annealing on surface microstructure of CrTiSiN coating
    Zhou, Qiong
    Wang, Tao
    Huang, Biao
    Zhang, Er-geng
    Chen, Qiang
    Liang, Dan-dan
    Wang, Zhan-yong
    Ke, Han-yin
    Chen, Rui-dong
    VACUUM, 2025, 234
  • [28] SCHOTTKY-BARRIER DEGRADATION OF THE W/GAAS SYSTEM AFTER HIGH-TEMPERATURE ANNEALING
    YU, KM
    CHEUNG, SK
    SANDS, T
    JAKLEVIC, JM
    CHEUNG, NW
    HALLER, EE
    JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) : 3235 - 3242
  • [29] High-temperature annealing and nuclear-transmutation doping of GaAs bombarded by reactor neutrons
    Brudnyi, VN
    Novikov, VA
    Peshev, VV
    Kolin, NG
    Noifekh, AI
    SEMICONDUCTORS, 1997, 31 (07) : 686 - 690
  • [30] Carbon-related defects in carbon-doped GaAs by high-temperature annealing
    Fushimi, H
    Wada, K
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) : 1208 - 1213
12345