A VAPOUR ETCHING TECHNIQUE FOR PHOTOLITHOGRAPHY OF SILICON DIOXIDE

被引：60
|
作者：
HOLMES, PJ
SNELL, JE
机构：
来源：
MICROELECTRONICS RELIABILITY | 1966年 / 5卷 / 04期
关键词：
D O I：
10.1016/0026-2714(66)90162-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：337 / &
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