ELECTRON-TUNNELING INTO NB3SN, NB3GE, AND NB3AL

被引：23

|

作者：

GEERK, J

KAUFMANN, U

BANGERT, W

RIETSCHEL, H

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.33.1621

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：1621 / 1626

页数：6

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