ELECTRON-TUNNELING INTO NB3SN, NB3GE, AND NB3AL

被引：23
|
作者：
GEERK, J
KAUFMANN, U
BANGERT, W
RIETSCHEL, H
机构：
来源：
PHYSICAL REVIEW B | 1986年 / 33卷 / 03期
关键词：
D O I：
10.1103/PhysRevB.33.1621
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：1621 / 1626
页数：6
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