TRANSIENT-BEHAVIOR OF SUBTHRESHOLD CHARACTERISTICS OF FULLY DEPLETED SOI MOSFETS

被引：15
|
作者：
ASSADERAGHI, F
CHEN, J
SOLOMON, R
CHAN, TY
KO, PK
HU, CM
机构：
[1] INTEL CORP,SANTA CLARA,CA 94050
[2] CYPRESS SEMICOND INC,SAN JOSE,CA 95134
来源：
IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 10期
关键词：
D O I：
10.1109/55.119175
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It has been found that the subthreshold currents of fully depleted silicon-on-insulator (SOI) MOSFET's show a transient behavior under certain front-gate and back-gate voltage conditions. The cause of this anomaly is explained, and applications for the above phenomenon are pointed out. Particularly, a simple way to measure the silicon film thickness is suggested.
引用
收藏
页码：518 / 520
页数：3
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