GaAs detector performance and radiation hardness

被引：10
|
作者：
Smith, KM
机构：
[1] Department of Physics and Astronomy, University of Glasgow, Glasgow
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1995年 / 368卷 / 01期
关键词：
D O I：
10.1016/0168-9002(95)00939-6
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Developments in GaAs microstrip and pixel detectors are described and their radiation hardness to neutron, proton and gamma radiation doses compared with those expected at the Large Hadron Collider (LHC). While the resistance to neutron and gamma-ray irradiation is satisfactory, GaAs Schottky diode detectors on semi-insulating substrates are found to be more susceptible than silicon detectors to proton-induced damage.
引用
收藏
页码：220 / 223
页数：4
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