LOW-TEMPERATURE SILICON EPITAXY USING SUPERSONIC MOLECULAR-BEAMS

Epitaxy of silicon using a non-Maxwellian beam source is demonstrated. Pulses of monoenergetic, high kinetic energy supersonic beams of a Si2H6-H-2 mixture are directed at the substrate leading to epitaxial growth. Reflection high energy electron diffraction (RHEED) intensity variations are observed for low temperature growth (< 500 degrees C) of silicon on Si(100). Arrhenius plots from these data indicate surface hydrogen dcsorption processes. Cross sectional transmission electron microscopy has been used to characterize the thin films for thickness and crystallinity. Results show that good quality crystalline films can be obtained at temperatures as low as 300 degrees C with this novel technique.