LOW-TEMPERATURE GROWTH OF ZNSE/GAAS USING POST-HEATED MOLECULAR-BEAMS

被引：7
|
作者：
OHISHI, M
SAITO, H
FUJISAKI, Y
TORIHARA, H
ABLET, I
机构：
[1] Department of Applied Physics, Okayama University of Science, Okayama, 700
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 6A期
关键词：
MOLECULAR-BEAM EPITAXY; POST-HEATED MOLECULAR BEAM; LOW-TEMPERATURE GROWTH; SURFACE MORPHOLOGY; PHOTOLUMINESCENCE;
D O I：
10.1143/JJAP.30.L1042
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
MBE growth of ZnSe/GaAs could be successfully performed at the substrate temperature as low as of 100-degrees-C using the molecular beams post-heated at 600-degrees-C both for Zn and Se by means of modified Knudsen cells composed of the effuser and the post-heating zone. ZnSe epilayers grown at 100-150-degrees-C showed the strong I2 bound exciton line and almost no other luminescence such as donor-acceptor pair, Y, S and deep emission at 4 K.
引用
收藏
页码：L1042 / L1044
页数：3
相关论文
共 50 条
  • [1] LOW-TEMPERATURE GROWTH OF ZNSE/GAAS USING HOT MOLECULAR-BEAMS
    OHISHI, M
    SAITO, H
    YONETA, M
    FUJISAKI, Y
    JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) : 125 - 128
  • [2] GENERATION AND EVALUATION OF POST-HEATED ZINC AND SELENIUM MOLECULAR-BEAMS
    YONETA, M
    OHISHI, M
    SAITO, H
    HAMASAKI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (8A): : L1106 - L1108
  • [3] LOW-TEMPERATURE DEPOSITION OF SINGLE CRYSTALLINE ZNSE FILMS ON GAAS SUBSTRATES BY SLIGHTLY IONIZED MOLECULAR-BEAMS
    YOKOTA, K
    TAMURA, S
    NAKAJIMA, T
    KATAYAMA, S
    JOURNAL OF CRYSTAL GROWTH, 1991, 109 (1-4) : 298 - 303
  • [4] LOW-TEMPERATURE EPITAXIAL-GROWTH OF ZN CHALCOGENIDES ON GAAS(001) BY POSTHEATED MOLECULAR-BEAMS
    YONETA, M
    HAMASAKI, T
    OHISHI, M
    SAITO, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03): : 878 - 880
  • [5] LOW-TEMPERATURE SILICON EPITAXY USING SUPERSONIC MOLECULAR-BEAMS
    MALIK, R
    GULARI, E
    LI, SH
    BHATTACHARYA, PK
    SINGH, J
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 984 - 988
  • [6] Generation and evaluation of post-heated zinc and selenium molecular beams
    Yoneta, Minoru, 1600, (32):
  • [7] AUTO-DOPING OF GA IN ZNSE/GAAS LAYERS GROWN AT LOW-TEMPERATURES BY POST-HEATED MOLECULAR-BEAM EPITAXY
    YONETA, M
    SAITO, H
    OHISHI, M
    JOURNAL OF CRYSTAL GROWTH, 1994, 138 (1-4) : 110 - 113
  • [8] DIFFRACTION OF NOZZLE MOLECULAR-BEAMS BY CRYSTAL-SURFACES AT LOW-TEMPERATURE
    BOATO, G
    CANTINI, P
    MATTERA, L
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, : 553 - 556
  • [9] LOW-TEMPERATURE GROWTH AND CHARACTERIZATION OF ZNSE FILMS GROWN ON GAAS
    STANZL, H
    WOLF, K
    BAUER, S
    KUHN, W
    NAUMOV, A
    GEBHARDT, W
    JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (05) : 501 - 503
  • [10] Low-temperature homoepitaxial growth of GaN using hyperthermal molecular beams
    Michel, A
    Chen, E
    Thomson, D
    Nam, O
    Davis, RF
    Lamb, HH
    WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE, 1998, 512 : 437 - 443
12345