LOW-TEMPERATURE GROWTH OF ZNSE/GAAS USING POST-HEATED MOLECULAR-BEAMS

被引：7
|
作者：
OHISHI, M
SAITO, H
FUJISAKI, Y
TORIHARA, H
ABLET, I
机构：
[1] Department of Applied Physics, Okayama University of Science, Okayama, 700
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 6A期
关键词：
MOLECULAR-BEAM EPITAXY; POST-HEATED MOLECULAR BEAM; LOW-TEMPERATURE GROWTH; SURFACE MORPHOLOGY; PHOTOLUMINESCENCE;
D O I：
10.1143/JJAP.30.L1042
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
MBE growth of ZnSe/GaAs could be successfully performed at the substrate temperature as low as of 100-degrees-C using the molecular beams post-heated at 600-degrees-C both for Zn and Se by means of modified Knudsen cells composed of the effuser and the post-heating zone. ZnSe epilayers grown at 100-150-degrees-C showed the strong I2 bound exciton line and almost no other luminescence such as donor-acceptor pair, Y, S and deep emission at 4 K.
引用
收藏
页码：L1042 / L1044
页数：3
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