Low-temperature molecular beam epitaxial growth of GaAs and (Ga,Mn)As

被引：0

作者：

Shen, A. ^{[1
]}

Matsukura, F. ^{[1
]}

Guo, S.P. ^{[1
]}

Sugawara, Y. ^{[1
]}

Ohno, H. ^{[1
]}

Tani, M. ^{[2
]}

Abe, H. ^{[2
]}

Liu, H.C. ^{[3
]}

机构：

[1] Lab. for Electron. Intelligent Syst., Res. Inst. Elec. Commun., Tohoku U., Sendai, Japan

[2] Kansai Advanced Research Center, Commun. Res. Lab., M.P.T., I., Kobe, Japan

[3] Inst. for Microstructural Sciences, National Research Council, Ottawa, Ont. K1A 0R6, Canada

来源：

Journal of Crystal Growth | 1999年 / 201卷

关键词：

Number:; 09244103; Acronym:; KAKEN; Sponsor: Japan Society for the Promotion of Science; -; MEXT; Sponsor: Ministry of Education; Culture; Sports; Science and Technology;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：679 / 683

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