Low-temperature molecular beam epitaxial growth of GaAs and (Ga,Mn)As

被引：0
|
作者：
Shen, A. [1 ]
Matsukura, F. [1 ]
Guo, S.P. [1 ]
Sugawara, Y. [1 ]
Ohno, H. [1 ]
Tani, M. [2 ]
Abe, H. [2 ]
Liu, H.C. [3 ]
机构：
[1] Lab. for Electron. Intelligent Syst., Res. Inst. Elec. Commun., Tohoku U., Sendai, Japan
[2] Kansai Advanced Research Center, Commun. Res. Lab., M.P.T., I., Kobe, Japan
[3] Inst. for Microstructural Sciences, National Research Council, Ottawa, Ont. K1A 0R6, Canada
来源：
Journal of Crystal Growth | 1999年 / 201卷
关键词：
Number:; 09244103; Acronym:; KAKEN; Sponsor: Japan Society for the Promotion of Science; -; MEXT; Sponsor: Ministry of Education; Culture; Sports; Science and Technology;
D O I：
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摘要：
引用
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页码：679 / 683
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