LOW-TEMPERATURE SILICON EPITAXY

被引：0

|

作者：

FRIESER, RG

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1966年 / 113卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：C217 / &

相关论文

共 50 条

[1] LOW-TEMPERATURE SILICON EPITAXY
FRIESER, RG
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (04) : 401 - +
[2] SILICON SELECTIVE EPITAXY AT LOW-TEMPERATURE
KAWAMURA, M
IKEDA, T
OGIRIMA, M
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C391 - C391
[3] PHOTOENHANCEMENT IN LOW-TEMPERATURE SILICON EPITAXY
ITO, T
YAMAZAKI, T
WATANABE, S
NARA, Y
ISHIKAWA, H
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) : C132 - C132
[4] BISTABLE CONDITIONS FOR LOW-TEMPERATURE SILICON EPITAXY
MEYERSON, BS
HIMPSEL, FJ
URAM, KJ
APPLIED PHYSICS LETTERS, 1990, 57 (10) : 1034 - 1036
[5] Low-temperature epitaxy on polycrystalline silicon substrates
Wagner, TA
Oberbeck, L
Bergmann, RB
Nerding, M
Strunk, HP
Werner, JH
POLYCRYSTALLINE SEMICONDUCTORS VII, PROCEEDINGS, 2003, 93 : 121 - 126
[6] LOW-TEMPERATURE EPITAXY OF SILICON BY MOLECULAR-BEAM EPITAXY (MBE)
KASPER, E
1980, 53 (4-5): : 170 - 176
[7] INFLUENCE OF SURFACE SUPERSTRUCTURES ON LOW-TEMPERATURE EPITAXY OF SILICON
FRANCOMB.MH
THOMAS, RN
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1967, 4 (05): : 323 - &
[8] LOW-TEMPERATURE LIQUID-PHASE EPITAXY OF SILICON
SHI, ZG
YOUNG, TL
GREEN, MA
MATERIALS LETTERS, 1991, 12 (05) : 339 - 343
[9] LOW-TEMPERATURE LIQUID-PHASE EPITAXY OF SILICON
LINNEBACH, R
BAUSER, E
JOURNAL OF CRYSTAL GROWTH, 1982, 57 (01) : 43 - 47
[10] SILICON EPITAXY AT LOW-TEMPERATURE BY PLASMA ENHANCED CVD
PONS, M
BOURGEAT, D
TRILHE, J
BOURDON, B
VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1980, 35 (200): : 3 - 12

← 1 2 3 4 5 →