共 50 条
- [22] LOW-TEMPERATURE SILICON EPITAXY BY LOW-ENERGY BIAS SPUTTERINGAPPLIED PHYSICS LETTERS, 1988, 53 (05) : 364 - 366OHMI, TMATSUDO, KSHIBATA, TICHIKAWA, TIWABUCHI, H
- [23] Low-temperature selective epitaxy of silicon with chlorinated chemistry by RTCVDMATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 89 (1-3): : 306 - 309Ribot, PDutartre, D
- [24] Explanation of the limiting thickness observed in low-temperature silicon epitaxyAPPLIED PHYSICS LETTERS, 2000, 77 (22) : 3589 - 3591Thiesen, JBranz, HMCrandall, RS
- [25] Silicon surface passivation by metal layers for low-temperature epitaxyJOURNAL OF CRYSTAL GROWTH, 1996, 163 (04) : 470 - 473Kuhnle, JBergmann, RWerner, JHAlbrecht, M
- [26] COOPERATIVE GROWTH PHENOMENA IN SILICON GERMANIUM LOW-TEMPERATURE EPITAXYAPPLIED PHYSICS LETTERS, 1988, 53 (25) : 2555 - 2557MEYERSON, BSURAM, KJLEGOUES, FK
- [27] ANTIMONY-ALLOYING OF SILICON UNDER LOW-TEMPERATURE EPITAXYPISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1990, 16 (24): : 1 - 5KANTER, BZNIKIFOROV, AISTENIN, SI
- [28] Low-temperature silicon epitaxy by ion-assisted depositionSOLID STATE PHENOMENA, 1999, 67-8 : 459 - 464Oberbeck, LBergmann, RBJensen, NOelting, SWerner, JH
- [29] NUCLEATION CONTROL OF SILICON ON SILICON-OXIDE FOR LOW-TEMPERATURE CVD AND SILICON SELECTIVE EPITAXYJOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) : 240 - 244KATO, MSATO, TMUROTA, JMIKOSHIBA, N
- [30] CRYSTALLINE FILM QUALITY IN REDUCED PRESSURE SILICON EPITAXY AT LOW-TEMPERATUREJOURNAL OF APPLIED PHYSICS, 1985, 57 (10) : 4589 - 4593NAGAO, SHIGASHITANI, KAKASAKA, YNAKATA, H