ANISOTROPIC ETCHING BEHAVIOR OF GALLIUM-ARSENIDE JUNCTIONS

被引：7

作者：

STIRLAND, DJ ^{[1
]}

机构：

[1] PLESSEY CO LTD,ALLEN CLARK RES CTR,CASWELL,TOWCESTER,NORTHAMPTONSHIR,ENGLAND

来源：

关键词：

D O I：

10.1007/BF00570391

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：969 / 980

页数：12

共 50 条

[31] GALLIUM-ARSENIDE ELECTRONICS
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