SUB-MICRON CHANNEL MOSFET USING FOCUSED BORON ION-BEAM IMPLANTATION INTO SILICON

被引：10
|
作者：
SHUKURI, S
WADA, Y
MASUDA, H
ISHITANI, T
TAMURA, M
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 08期
关键词：
D O I：
10.1143/JJAP.23.L543
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L543 / L545
页数：3
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