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ANALYSIS OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE BY RUTHERFORD BACKSCATTERING SPECTROMETRY
被引:9
|
作者
:
HWANG, HL
论文数:
0
引用数:
0
h-index:
0
机构:
IND TECHNOL RES INST,ELECTR RES & SERV ORG,IC DEV CTR,HSINCHU,TAIWAN
HWANG, HL
HWU, CC
论文数:
0
引用数:
0
h-index:
0
机构:
IND TECHNOL RES INST,ELECTR RES & SERV ORG,IC DEV CTR,HSINCHU,TAIWAN
HWU, CC
LIUE, JC
论文数:
0
引用数:
0
h-index:
0
机构:
IND TECHNOL RES INST,ELECTR RES & SERV ORG,IC DEV CTR,HSINCHU,TAIWAN
LIUE, JC
LIH, HH
论文数:
0
引用数:
0
h-index:
0
机构:
IND TECHNOL RES INST,ELECTR RES & SERV ORG,IC DEV CTR,HSINCHU,TAIWAN
LIH, HH
机构
:
[1]
IND TECHNOL RES INST,ELECTR RES & SERV ORG,IC DEV CTR,HSINCHU,TAIWAN
[2]
INST NUCL ENERGY RES,TAOYUAN,TAIWAN
来源
:
APPLIED PHYSICS LETTERS
|
1982年
/ 41卷
/ 09期
关键词
:
D O I
:
10.1063/1.93714
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:844 / 846
页数:3
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