GAMMA-X-GAMMA ELECTRON-TRANSFER IN MIXED TYPE-I TYPE-II GAAS/ALAS QUANTUM-WELL STRUCTURES

被引:49
|
作者
FELDMANN, J
PREIS, M
GOBEL, EO
DAWSON, P
FOXON, CT
GALBRAITH, I
机构
[1] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT PURE & APPL PHYS,MANCHESTER M60 1QD,LANCS,ENGLAND
[2] UNIV MANCHESTER,INST SCI & TECHNOL,ZENTRUM MAT WISSENSCH,MANCHESTER M60 1QD,LANCS,ENGLAND
[3] UNIV NOTTINGHAM,DEPT PHYS,NOTTINGHAM NG7 2RD,ENGLAND
[4] HERIOT WATT UNIV,DEPT PHYS,EDINBURGH EH14 4AS,MIDLOTHIAN,SCOTLAND
关键词
D O I
10.1016/0038-1098(92)90846-2
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have studied the relaxation dynamics of photoexcited electrons in a mixed type I-type II GaAs/AlAs quantum well structure. The spatial electron-hole separation via a GAMMA-X-GAMMA electron transfer is detected in a time-resolved, non-degenerate pump and probe experiment. The time-constant for the spatial GAMMA-X-GAMMA electron transfer is determined to about 30 ps and is governed by the low density of final GAMMA-states.
引用
收藏
页码:245 / 248
页数:4
相关论文
共 50 条
  • [31] Type-I and type-II interband transitions in CdSe/ZnTe quantum well structures
    Haetty, J
    Lee, EH
    Luo, H
    Petrou, A
    Warnock, J
    SOLID STATE COMMUNICATIONS, 1998, 108 (04) : 205 - 209
  • [32] Photocurrent and photoluminescence affected by Γ-x electron transfer in type-I GaAs/AlAs superlattices
    Mimura, H
    Hosoda, M
    Ohtani, N
    Yokoo, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (3B): : 1646 - 1649
  • [33] Homogeneous linewidth of type-I localized excitons in type-II GaAs/AlAs superlattices
    Zhao, H
    Wachter, S
    Kalt, H
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2002, 190 (03): : 693 - 697
  • [34] GAMMA-X MIXING EFFECTS ON PHOTOLUMINESCENCE INTENSITY IN GAAS/ALAS TYPE-II SUPERLATTICES
    NAKAYAMA, M
    IMAZAWA, K
    TANAKA, I
    NISHIMURA, H
    SOLID STATE COMMUNICATIONS, 1993, 88 (01) : 43 - 46
  • [35] Luminescence dynamics in GaAs/AlAs superlattices near the type-I/type-II crossover
    Langbein, W
    Hvam, JM
    Kait, H
    JOURNAL OF LUMINESCENCE, 1997, 72-4 : 350 - 352
  • [36] Luminescence dynamics in GaAs/AlAs superlattices near the type-I/type-II crossover
    Langbein, W.
    Hvam, J.M.
    Kalt, H.
    Journal of Luminescence, 1997, 72-74 : 350 - 352
  • [37] GAMMA-X MIXING IN TYPE-II GAAS/ALAS SHORT-PERIOD SUPERLATTICES
    VOLIOTIS, V
    GROUSSON, R
    LAVALLARD, P
    IVCHENKO, EL
    KISELEV, AA
    PLANEL, R
    JOURNAL DE PHYSIQUE IV, 1993, 3 (C5): : 237 - 240
  • [38] Effect of the type-I to type-II transition on the binding energy of shallow donors in GaAs/AlAs quantum wells
    Lima, ATD
    Lima, ICD
    daSilva, AF
    PHYSICAL REVIEW B, 1997, 55 (23): : 15420 - 15422
  • [39] EFFECT OF MAGNETIC-FIELDS ON EXCITON BINDING-ENERGIES IN TYPE-II GAAS-ALAS QUANTUM-WELL STRUCTURES
    BRANIS, SV
    CEN, J
    BAJAJ, KK
    PHYSICAL REVIEW B, 1991, 44 (20): : 11196 - 11202
  • [40] BINDING-ENERGIES OF EXCITONS IN TYPE-II GAAS-ALAS QUANTUM-WELL STRUCTURES IN THE PRESENCE OF A MAGNETIC-FIELD
    ZHANG, XD
    BAJAJ, KK
    PHYSICAL REVIEW B, 1991, 44 (19): : 10913 - 10916