Luminescence dynamics in GaAs/AlAs superlattices near the type-I/type-II crossover

被引：0
|
作者：
Langbein, W [1 ]
Hvam, JM [1 ]
Kait, H [1 ]
机构：
[1] UNIV KARLSRUHE,INST ANGEW PHYS,D-76128 KARLSRUHE,GERMANY
来源：
JOURNAL OF LUMINESCENCE | 1997年 / 72-4卷
关键词：
GaAs/AlAs superlattices; localization; type-II;
D O I：
10.1016/S0022-2313(96)00290-6
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report on the time-resolved luminescence of a GaAs/AlAs superlattice with slight type-II band alignment. We show that the inhomogeneous broadening of the type-I transition and the weak type-II oscillator strength load to a dominant luminescence of localized type-I states. We observe a strong increase of the luminescence decay time with increasing temperature and excitation density, which is attributed to the type-II states acting as an electron reservoir.
引用
收藏
页码：350 / 352
页数：3
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