GROWTH OF HEAVILY BE-DOPED ALINP BY GAS SOURCE MOLECULAR-BEAM EPITAXY

被引：11
|
作者：
YOKOTSUKA, T
TAKAMORI, A
NAKAJIMA, M
机构：
[1] Matsushita Research Institute Tokyo, Inc., Tama, Kawasaki 214
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 14期
关键词：
D O I：
10.1063/1.105165
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Heavily Be-doped p-type AlInP layers have successfully grown on (001)GaAs by gas source molecular beam epitaxy (GSMBE) using phosphine (PH3). Net hole concentration (N(h)) as high as about 3.5 x 10(18) cm-3 is achieved for the first time. The surface morphology is found to be smooth up to a Be concentration of 3 x 10(19) cm-3. The resistivity for N(h) = 3.5 x 10(18) cm-3 is as low as 0.3 OMEGA cm. The improvement of the electrical activity and surface morphology may be ascribed to subhidrides of phosphorus decomposed from PH3 during GSMBE growth.
引用
收藏
页码：1521 / 1523
页数：3
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