SELECTIVE GROWTH CONDITION IN DISILANE GAS SOURCE SILICON MOLECULAR-BEAM EPITAXY

被引：88
|
作者：
HIRAYAMA, H
TATSUMI, T
AIZAKI, N
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 26期
关键词：
D O I：
10.1063/1.99654
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：2242 / 2243
页数：2
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